JAN2N4449UB/TR Microchip Technology
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UB
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Qualification: MIL-PRF-19500/317
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UB
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Qualification: MIL-PRF-19500/317
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Технічний опис JAN2N4449UB/TR Microchip Technology
Description: SMALL-SIGNAL BJT, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 400nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V, Supplier Device Package: UB, Grade: Military, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 400 mW, Qualification: MIL-PRF-19500/317.
Інші пропозиції JAN2N4449UB/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JAN2N4449UB/TR | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT 15V 600MW NPN Round-End Small-Signal BJT TR |
товару немає в наявності |