Технічний опис JAN2N4449UB Microchip Technology
Description: SMALL-SIGNAL BJT, Packaging: Bulk, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 400nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V, Supplier Device Package: UB, Voltage - Collector Emitter Breakdown (Max): 15 V, Power - Max: 400 mW, Grade: Military, Qualification: MIL-PRF-19500/317.
Інші пропозиції JAN2N4449UB
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JAN2N4449UB | Виробник : Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: UB Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 400 mW Grade: Military Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
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| JAN2N4449UB | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT 15V 600MW NPN Round-End Small-Signal BJT |
товару немає в наявності |