Технічний опис JAN2N4854 MOTOROLA
Description: NPN TRANSISTOR, Part Status: Active, Supplier Device Package: TO-78-6, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Voltage - Collector Emitter Breakdown (Max): 40V, Current - Collector (Ic) (Max): 600mA, Power - Max: 600mW, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, PNP, Mounting Type: Through Hole, Package / Case: TO-78-6 Metal Can, Packaging: Bulk.
Інші пропозиції JAN2N4854
| Фото | Назва | Виробник | Інформація |
Доступність |
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JAN2N4854 | Виробник : Microchip Technology |
Description: NPN TRANSISTOR Part Status: Active Supplier Device Package: TO-78-6 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 600mA Power - Max: 600mW Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN, PNP Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Packaging: Bulk |
товару немає в наявності |
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| JAN2N4854 | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT BJTs |
товару немає в наявності |