Технічний опис JAN2N4854 MOTOROLA
Description: NPN TRANSISTOR, Packaging: Bulk, Package / Case: TO-78-6 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, PNP, Operating Temperature: -65°C ~ 200°C (TJ), Power - Max: 600mW, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-78-6, Part Status: Active.
Інші пропозиції JAN2N4854
Фото | Назва | Виробник | Інформація |
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JAN2N4854 | Виробник : Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: NPN, PNP Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 600mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-78-6 Part Status: Active |
товар відсутній |
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JAN2N4854 | Виробник : Microchip / Microsemi | Bipolar Transistors - BJT BJTs |
товар відсутній |