Технічний опис JAN2N5682 MOTOROLA
Description: TRANS NPN 120V 1A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V, Supplier Device Package: TO-39 (TO-205AD), Grade: Military, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 1 W, Qualification: MIL-PRF-19500/583.
Інші пропозиції JAN2N5682
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JAN2N5682 | Виробник : Microchip Technology |
 Description: TRANS NPN 120V 1A TO39Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1 W Qualification: MIL-PRF-19500/583 |
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| JAN2N5682 | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT |
товар відсутній |