Технічний опис JAN2N6277 MOTOROLA
Description: TRANS NPN 150V 50A TO3, Packaging: Bulk, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 10A, 50A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20A, 4V, Supplier Device Package: TO-3 (TO-204AA), Grade: Military, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 250 W, Qualification: MIL-PRF-19500/514.
Інші пропозиції JAN2N6277
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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JAN2N6277 | Виробник : Microchip Technology |
 Trans GP BJT NPN 150V 50A 250000mW 3-Pin(2+Tab) TO-3 Tray |
товару немає в наявності |
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| JAN2N6277 | Виробник : Microchip Technology |
Description: TRANS NPN 150V 50A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 10A, 50A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20A, 4V Supplier Device Package: TO-3 (TO-204AA) Grade: Military Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 250 W Qualification: MIL-PRF-19500/514 |
товару немає в наявності |
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JAN2N6277 | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT |
товару немає в наявності |