Технічний опис JAN2N6338 MOTOROLA
Description: TRANS NPN 100V 50UA TO3, Power - Max: 200 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 50 µA, Part Status: Active, Supplier Device Package: TO-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V, Current - Collector Cutoff (Max): 50µA, Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-204AA, TO-3, Packaging: Bulk.
Інші пропозиції JAN2N6338
| Фото | Назва | Виробник | Інформація |
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JAN2N6338 | Виробник : Microchip Technology |
Description: TRANS NPN 100V 50UA TO3 Power - Max: 200 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 50 µA Part Status: Active Supplier Device Package: TO-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V Current - Collector Cutoff (Max): 50µA Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Packaging: Bulk |
товару немає в наявності |
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JAN2N6338 | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT Power BJT |
товару немає в наявності |