Технічний опис JAN2N6338 MOTOROLA
Description: TRANS NPN 100V 50UA TO3, Packaging: Bulk, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V, Supplier Device Package: TO-3, Part Status: Active, Current - Collector (Ic) (Max): 50 µA, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 200 W.
Інші пропозиції JAN2N6338
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JAN2N6338 | Виробник : Microchip Technology |
Description: TRANS NPN 100V 50UA TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 50 µA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 200 W |
товар відсутній |
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JAN2N6338 | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT Power BJT |
товар відсутній |