Технічний опис JAN2N6350 NES/MSC
Description: TRANS NPN DARL 80V 5A TO33, Packaging: Bulk, Package / Case: TO-205AC, TO-33-4 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 5A, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 5V, Supplier Device Package: TO-33, Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1 W, Grade: Military, Qualification: MIL-PRF-19500/472.
Інші пропозиції JAN2N6350
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JAN2N6350 | Виробник : Microsemi |
 Trans Darlington NPN 80V 5A 1000mW 4-Pin TO-33 Box |
товару немає в наявності |
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| JAN2N6350 | Виробник : Microchip Technology |
Description: TRANS NPN DARL 80V 5A TO33 Packaging: Bulk Package / Case: TO-205AC, TO-33-4 Metal Can Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 5A DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 5V Supplier Device Package: TO-33 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W Grade: Military Qualification: MIL-PRF-19500/472 |
товару немає в наявності |
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| JAN2N6350 | Виробник : Microchip Technology |
Darlington Transistors Power BJT |
товару немає в наявності |