Технічний опис JAN2N6353 UNI/MSC
Description: TRANS NPN DARL 150V 5A TO66, Packaging: Bulk, Package / Case: TO-213AA, TO-66-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V, Supplier Device Package: TO-66 (TO-213AA), Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 2 W.
Інші пропозиції JAN2N6353
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| JAN2N6353 | Виробник : Microsemi |
 Trans Darlington NPN 150V 5A 2000mW 4-Pin(3+Tab) TO-66 Tray |
товар відсутній |
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JAN2N6353 | Виробник : Microchip Technology |
Trans Darlington NPN 150V 5A 2000mW 4-Pin(3+Tab) TO-66 Tray |
товар відсутній |
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| JAN2N6353 | Виробник : Microchip Technology |
Description: TRANS NPN DARL 150V 5A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 2 W |
товар відсутній |