Технічний опис JAN2N696 MOTOROLA
Description: TRANS NPN 40V TO5, Power - Max: 600 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Supplier Device Package: TO-5AA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AA, TO-5-3 Metal Can, Packaging: Bulk.
Інші пропозиції JAN2N696
| Фото | Назва | Виробник | Інформація |
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JAN2N696 | Виробник : Microchip Technology |
Description: TRANS NPN 40V TO5 Power - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 40 V Supplier Device Package: TO-5AA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk |
товару немає в наявності |
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| JAN2N696 | Виробник : Microsemi |
 Bipolar Transistors - BJT Power BJT |
товару немає в наявності |