Технічний опис JAN2N697 MOTOROLA
Description: TRANS NPN 40V TO5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Supplier Device Package: TO-5, Grade: Military, Part Status: Active, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 600 mW, Qualification: MIL-PRF-19500/99.
Інші пропозиції JAN2N697
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| JAN2N697 | Microchip Technology |
 Description: TRANS NPN 40V TO5Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-5 Grade: Military Part Status: Active Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 600 mW Qualification: MIL-PRF-19500/99 |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
JAN2N697 | Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
| JAN2N697 |
|
Виробник: Microchip Technology
Description: TRANS NPN 40V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Qualification: MIL-PRF-19500/99
Description: TRANS NPN 40V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Qualification: MIL-PRF-19500/99
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N697 |
|
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT Power BJT
Bipolar Transistors - BJT Power BJT
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.