Jan2N6989 Microchip Technology
Виробник: Microchip TechnologyDescription: TRANS 4NPN 50V 0.8A TO116
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 4 NPN (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.5W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-116
Grade: Military
Qualification: MIL-PRF-19500/559
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Технічний опис Jan2N6989 Microchip Technology
Description: TRANS 4NPN 50V 0.8A TO116, Packaging: Bulk, Package / Case: 14-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Transistor Type: 4 NPN (Quad), Operating Temperature: -65°C ~ 200°C (TJ), Power - Max: 1.5W, Current - Collector (Ic) (Max): 800mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-116, Grade: Military, Qualification: MIL-PRF-19500/559.
Інші пропозиції Jan2N6989
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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Jan2N6989 | Виробник : Microchip / Microsemi |
MOSFET BJTs |
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