JAN2N6989U/TR Microchip Technology
Виробник: Microchip Technology
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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Технічний опис JAN2N6989U/TR Microchip Technology
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: 4 PNP (Quad), Operating Temperature: -65°C ~ 200°C (TJ), Power - Max: 1W, Current - Collector (Ic) (Max): 800mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: 6-SMD, Grade: Military, Qualification: MIL-PRF-19500/559.
Інші пропозиції JAN2N6989U/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
JAN2N6989U/TR | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT BJTs |
товар відсутній |