Технічний опис JAN2N708 MOTOROLA
Description: TRANS NPN 15V TO18, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 25nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V, Supplier Device Package: TO-18 (TO-206AA), Part Status: Active, Voltage - Collector Emitter Breakdown (Max): 15 V, Power - Max: 360 mW.
Інші пропозиції JAN2N708
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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JAN2N708 | Виробник : Microchip Technology |
 Trans GP BJT NPN 15V 360mW 3-Pin TO-18 Bag |
товар відсутній |
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JAN2N708 | Виробник : Microchip Technology |
Description: TRANS NPN 15V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA Current - Collector Cutoff (Max): 25nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 360 mW |
товар відсутній |
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| JAN2N708 | Виробник : Microchip Technology |
Bipolar Transistors - BJT BJTs |
товар відсутній |