JAN2N918UB/TR Microchip Technology
Виробник: Microchip Technology
Description: TRANS NPN 15V 0.05A
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Non-Standard
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/301
Description: TRANS NPN 15V 0.05A
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Non-Standard
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/301
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Технічний опис JAN2N918UB/TR Microchip Technology
Description: TRANS NPN 15V 0.05A, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Non-Standard, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 15 V, Power - Max: 200 mW, Qualification: MIL-PRF-19500/301.
Інші пропозиції JAN2N918UB/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
JAN2N918UB/TR | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT 15 V Small-Signal BJT |
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