JANHCB2N4033

JANHCB2N4033 Microchip Technology


Виробник: Microchip Technology
Description: TRANS PNP 80V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/512
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Технічний опис JANHCB2N4033 Microchip Technology

Description: TRANS PNP 80V 1A TO39, Packaging: Tape & Reel (TR), Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A, Current - Collector Cutoff (Max): 25nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Supplier Device Package: TO-39, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 800 mW, Grade: Military, Qualification: MIL-PRF-19500/512.

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JANHCB2N4033 Виробник : Microchip / Microsemi Bipolar Transistors - BJT 80 V Small-Signal BJT
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