JANS1N5552 Microchip / Microsemi
| Кількість | Ціна |
|---|---|
| 1+ | 5814.97 грн |
| 10+ | 5535.81 грн |
| 25+ | 4696.39 грн |
| 100+ | 4594.91 грн |
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Технічний опис JANS1N5552 Microchip / Microsemi
Description: DIODE GEN PURP 600V 3A AXIAL, Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A, Qualification: MIL-PRF-19500/420, Grade: Military, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: B, Axial, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 2 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: B, Axial, Packaging: Bulk.
Інші пропозиції JANS1N5552
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
JANS1N5552 | Microchip Technology |
 Description: DIODE GEN PURP 600V 3A AXIALCurrent - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Qualification: MIL-PRF-19500/420 Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: B, Axial Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: B, Axial Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
| JANS1N5552 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Qualification: MIL-PRF-19500/420
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Description: DIODE GEN PURP 600V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Qualification: MIL-PRF-19500/420
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.