Технічний опис JANS1N5615US Microchip Technology
Description: DIODE GEN PURP 200V 1A A SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: A, SQ-MELF, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A, Grade: Military, Qualification: MIL-PRF-19500/429.
Інші пропозиції JANS1N5615US
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JANS1N5615US | Виробник : Microchip Technology |
Description: DIODE GEN PURP 200V 1A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Grade: Military Qualification: MIL-PRF-19500/429 |
товару немає в наявності |
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JANS1N5615US | Виробник : Microchip / Microsemi | Rectifiers UFR,FRR |
товару немає в наявності |