JANS1N5618 Microchip Technology

Description: DIODE GEN PURP 600V 1A A AXIAL, Voltage - DC Reverse (Vr) (Max): 600 V, Grade: Military, Operating Temperature - Junction: -65°C ~ 200°C, Supplier Device Package: A, Axial, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 2 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: A, Axial, Packaging: Bulk, Qualification: MIL-PRF-19500/427, Current - Reverse Leakage @ Vr: 500 nA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A.