JANS2N3637L Microchip Technology
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A TO-5AA
Qualification: MIL-PRF-19500/357
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 175 V
Current - Collector (Ic) (Max): 1 A
Grade: Military
Supplier Device Package: TO-5AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
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Технічний опис JANS2N3637L Microchip Technology
Description: TRANS PNP 175V 1A TO-5AA, Qualification: MIL-PRF-19500/357, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 175 V, Current - Collector (Ic) (Max): 1 A, Grade: Military, Supplier Device Package: TO-5AA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-205AA, TO-5-3 Metal Can, Packaging: Bulk.