Технічний опис JANS2N5154L Microsemi
Description: TRANS NPN 80V 0.001A TO5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V, Supplier Device Package: TO-5AA, Grade: Military, Current - Collector (Ic) (Max): 1 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1 W, Qualification: MIL-PRF-19500/544.
Інші пропозиції JANS2N5154L
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JANS2N5154L | Виробник : Microchip Technology |
 Trans GP BJT NPN 80V 2A 1000mW 3-Pin TO-5 Tray |
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JANS2N5154L | Виробник : Semicoa Semiconductors |
NPN Bipolar junction transistor 80V |
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JANS2N5154L | Виробник : Microchip Technology |
Description: TRANS NPN 80V 0.001A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-5AA Grade: Military Current - Collector (Ic) (Max): 1 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W Qualification: MIL-PRF-19500/544 |
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| JANS2N5154L | Виробник : Microchip / Microsemi | Bipolar Transistors - BJT Power BJT |
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