JANS2N6987 Microchip Technology
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.5W
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-116
Grade: Military
Qualification: MIL-PRF-19500/558
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.5W
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-116
Grade: Military
Qualification: MIL-PRF-19500/558
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис JANS2N6987 Microchip Technology
Description: PNP TRANSISTOR, Packaging: Bulk, Package / Case: 14-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Transistor Type: 4 PNP (Quad), Operating Temperature: -65°C ~ 200°C (TJ), Power - Max: 1.5W, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-116, Grade: Military, Qualification: MIL-PRF-19500/558.
Інші пропозиції JANS2N6987
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JANS2N6987 | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT BJTs |
товару немає в наявності |