Технічний опис JANS2N6988 Microchip Technology
Description: PNP TRANSISTOR, Packaging: Bulk, Package / Case: 14-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Transistor Type: 4 PNP (Quad), Operating Temperature: -65°C ~ 200°C (TJ), Power - Max: 400mW, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-116, Grade: Military, Qualification: MIL-PRF-19500/558.
Інші пропозиції JANS2N6988
| Фото | Назва | Виробник | Інформація |
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| JANS2N6988 | Виробник : Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Transistor Type: 4 PNP (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 400mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-116 Grade: Military Qualification: MIL-PRF-19500/558 |
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JANS2N6988 | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT BJTs |
товар відсутній |