Технічний опис JANSP2N2906AL Microchip Technology
Description: RH SMALL-SIGNAL BJT, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Supplier Device Package: TO-18 (TO-206AA), Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 500 mW.
Інші пропозиції JANSP2N2906AL
| Фото | Назва | Виробник | Інформація |
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JANSP2N2906AL | Виробник : Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
товару немає в наявності |
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| JANSP2N2906AL | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT RH Small-Signal BJT |
товару немає в наявності |