Технічний опис JANSR2N2905A Microsemi
Description: TRANS PNP 60V 0.6A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-39 (TO-205AD), Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 800 mW, Qualification: MIL-PRF-19500/290. 
Інші пропозиції JANSR2N2905A
| Фото | Назва | Виробник | Інформація | 
            Доступність             | 
        Ціна | 
|---|---|---|---|---|---|
                      | 
        JANSR2N2905A | Виробник : Microchip Technology | 
            
                         Description: TRANS PNP 60V 0.6A TO39Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW Qualification: MIL-PRF-19500/290  | 
        
                             товару немає в наявності                      | 
        |
| JANSR2N2905A | Виробник : Microchip / Microsemi | 
            
                         Bipolar Transistors - BJT 60V 600mA 800mW NPN RH Small-Signal BJT THT         | 
        
                             товару немає в наявності                      | 
        

