Технічний опис JANSR2N2906AUB Microchip Technology
Description: TRANS PNP 60V 0.6A UB, Packaging: Bulk, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Supplier Device Package: UB, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 500 mW, Grade: Military, Qualification: MIL-PRF-19500/291.
Інші пропозиції JANSR2N2906AUB
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JANSR2N2906AUB | Виробник : Microsemi |
 Trans GP BJT PNP 60V 0.6A 500mW 4-Pin Case UB Waffle |
товару немає в наявності |
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JANSR2N2906AUB | Виробник : Microchip Technology |
Description: TRANS PNP 60V 0.6A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/291 |
товару немає в наявності |
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| JANSR2N2906AUB | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT 60V 600MA 500MW PNP Round-End RH Small-Signal BJT |
товару немає в наявності |