JANSR2N3019 Microchip Technology
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A TO-5AA
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
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Технічний опис JANSR2N3019 Microchip Technology
Description: TRANS NPN 80V 1A TO-5AA, Qualification: MIL-PRF-19500/391, Grade: Military, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: TO-5AA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AA, TO-5-3 Metal Can, Packaging: Bulk.
Інші пропозиції JANSR2N3019
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| JANSR2N3019 | Microchip / Microsemi |
 Bipolar Transistors - BJT 80V 1A 800mW RH Small-Signal BJT THT |
товару немає в наявності |
В кошику од. на суму грн. |
| JANSR2N3019 |
|
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT 80V 1A 800mW RH Small-Signal BJT THT
Bipolar Transistors - BJT 80V 1A 800mW RH Small-Signal BJT THT
товару немає в наявності
В кошику
од. на суму грн.