JANSR2N3501UB

JANSR2N3501UB Microchip Technology


lds-0056.pdf Виробник: Microchip Technology
Trans GP BJT NPN 150V 0.3A 1000mW 4-Pin Case UB Waffle
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Технічний опис JANSR2N3501UB Microchip Technology

Description: TRANS NPN 150V 0.3A UB, Packaging: Bulk, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: UB, Grade: Military, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 500 mW, Qualification: MIL-PRF-19500/366.

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JANSR2N3501UB JANSR2N3501UB Виробник : Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JANSR2N3501UB Виробник : Microchip Technology mslws00675_1-2275600.pdf Bipolar Transistors - BJT BJTs
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JANSR2N3501UB Виробник : Microchip / Microsemi mslws00675_1-2275600.pdf Bipolar Transistors - BJT RH Small-Signal BJT
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