Технічний опис JANSR2N3810 Microsemi
Description: PNP TRANSISTOR, Packaging: Bulk, Package / Case: TO-78-6 Metal Can, Mounting Type: Through Hole, Transistor Type: 2 PNP (Dual), Operating Temperature: -65°C ~ 200°C (TJ), Power - Max: 350mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V, Supplier Device Package: TO-78-6, Grade: Military, Qualification: MIL-PRF-19500/336.
Інші пропозиції JANSR2N3810
| Фото | Назва | Виробник | Інформація |
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JANSR2N3810 | Виробник : Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 Grade: Military Qualification: MIL-PRF-19500/336 |
товару немає в наявності |
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| JANSR2N3810 | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT Dual RH Small-Signal BJT |
товару немає в наявності |