Технічний опис JANSR2N3810U Semicoa
Description: RH SMALL-SIGNAL BJT, Packaging: Tray, Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: -65°C ~ 200°C (TJ), Power - Max: 350mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V, Supplier Device Package: 6-SMD, Grade: Military, Qualification: MIL-PRF-19500/336.
Інші пропозиції JANSR2N3810U
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JANSR2N3810U | Виробник : Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Tray Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/336 |
товару немає в наявності |
||
| JANSR2N3810U | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT Dual RH Small-Signal BJT |
товару немає в наявності |