Технічний опис JANSR2N5153 Microchip Technology
Description: TRANS PNP 80V 2A TO39, Packaging: Tray, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V, Supplier Device Package: TO-39 (TO-205AD), Grade: Military, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1 W, Qualification: MIL-PRF-19500/545.
Інші пропозиції JANSR2N5153
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
JANSR2N5153 | Виробник : Microchip Technology |
 Description: TRANS PNP 80V 2A TO39Packaging: Tray Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W Qualification: MIL-PRF-19500/545 |
товару немає в наявності |
|
| JANSR2N5153 | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT RH Power BJT |
товару немає в наявності |