Технічний опис JANSR2N7589U3 Microchip Technology
Description: RH MOSFET 150V U3, Packaging: Bulk, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 88mOhm @ 12A, 12V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: U3 (SMD-0.5), Grade: Military, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 25 V, Qualification: MIL-STD-750.
Інші пропозиції JANSR2N7589U3
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JANSR2N7589U3 | Виробник : Microchip Technology |
Description: RH MOSFET 150V U3 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 12A, 12V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: U3 (SMD-0.5) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 25 V Qualification: MIL-STD-750 |
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