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Технічний опис JANTX1N4248 Microchip / Microsemi
Description: DIODE GEN PURP 800V 1A AXIAL, Part Status: Discontinued at Digi-Key, Supplier Device Package: Axial, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 2 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: Axial, Packaging: Bulk, Qualification: MIL-PRF-19500/286, Grade: Military, Current - Reverse Leakage @ Vr: 1 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 800 V.
Інші пропозиції JANTX1N4248
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
JANTX1N4248 | Microchip Technology |
 Description: DIODE GEN PURP 800V 1A E3Current - Reverse Leakage @ Vr: 1 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: E3 Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Package / Case: E3 Packaging: Bulk Qualification: MIL-PRF-19500/286 Grade: Military |
товару немає в наявності |
Мінімальне замовлення: 110 шт В кошику од. на суму грн. |
| JANTX1N4248 | Semtech Corporation |
Description: DIODE GEN PURP 800V 1A AXIAL Part Status: Discontinued at Digi-Key Supplier Device Package: Axial Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: Axial Packaging: Bulk Qualification: MIL-PRF-19500/286 Grade: Military Current - Reverse Leakage @ Vr: 1 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V |
товару немає в наявності |
В кошику од. на суму грн. |
| JANTX1N4248 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 1A E3
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: E3
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Package / Case: E3
Packaging: Bulk
Qualification: MIL-PRF-19500/286
Grade: Military
Description: DIODE GEN PURP 800V 1A E3
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: E3
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Package / Case: E3
Packaging: Bulk
Qualification: MIL-PRF-19500/286
Grade: Military
товару немає в наявності
Мінімальне замовлення: 110 шт
В кошику
од. на суму грн.
| JANTX1N4248 |
|
Виробник: Semtech Corporation
Description: DIODE GEN PURP 800V 1A AXIAL
Part Status: Discontinued at Digi-Key
Supplier Device Package: Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/286
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Description: DIODE GEN PURP 800V 1A AXIAL
Part Status: Discontinued at Digi-Key
Supplier Device Package: Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/286
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
товару немає в наявності
В кошику
од. на суму грн.