Технічний опис JANTX1N5195/TR Microchip Technology
Description: DIODE GEN PURP 180V 200MA DO35, Packaging: Tape & Reel (TR), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Standard, Current - Average Rectified (Io): 200mA, Supplier Device Package: DO-35, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 180 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Current - Reverse Leakage @ Vr: 1 µA @ 200 V, Qualification: MIL-PRF-19500/118.
Інші пропозиції JANTX1N5195/TR
| Фото | Назва | Виробник | Інформація |
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Ціна |
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JANTX1N5195/TR | Виробник : Microchip Technology |
Description: DIODE GEN PURP 180V 200MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 180 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V Qualification: MIL-PRF-19500/118 |
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