Технічний опис JANTX1N5416/TR Microchip Technology
Description: DIODE GEN PURP 100V 3A, Packaging: Tape & Reel (TR), Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 100 V, Qualification: MIL-PRF-19500/411.
Інші пропозиції JANTX1N5416/TR
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JANTX1N5416/TR | Виробник : Microchip Technology |
 Description: DIODE GEN PURP 100V 3APackaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: MIL-PRF-19500/411 |
товару немає в наявності |
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JANTX1N5416/TR | Виробник : Microchip / Microsemi |
Rectifiers 110V 3A UFR,FRR THT TR |
товару немає в наявності |