Технічний опис JANTX1N5553US Microsemi
Description: DIODE GEN PURP 800V 3A D-5B, Packaging: Bulk, Package / Case: SQ-MELF, E, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: D-5B, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 800 V.
Інші пропозиції JANTX1N5553US
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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JANTX1N5553US | Виробник : Microchip Technology |
 Rectifier Diode Switching 800V 5A 2000ns 2-Pin B-MELF Bag |
товару немає в наявності |
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JANTX1N5553US | Виробник : Microchip Technology |
Description: DIODE GEN PURP 800V 3A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
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JANTX1N5553US | Виробник : Semtech Corporation |
Description: DIODE GEN PURP 800V 5A Packaging: Bulk Package / Case: SQ-MELF Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 92pF @ 5V, 1MHz Current - Average Rectified (Io): 5A Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
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JANTX1N5553US | Виробник : Microchip / Microsemi |
Rectifiers Rectifier |
товару немає в наявності |