Технічний опис JANTX1N5553US Microsemi
Description: DIODE GEN PURP 800V 3A D-5B, Packaging: Bulk, Package / Case: SQ-MELF, E, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: D-5B, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 800 V.
Інші пропозиції JANTX1N5553US
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
JANTX1N5553US | Microchip Technology |
 Description: DIODE GEN PURP 800V 3A D-5BPackaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
 |
JANTX1N5553US | Semtech Corporation |
Description: DIODE GEN PURP 800V 5A Current - Reverse Leakage @ Vr: 1 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 92pF @ 5V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SQ-MELF Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
 |
JANTX1N5553US | Microchip / Microsemi |
Rectifiers Rectifier |
товару немає в наявності |
В кошику од. на суму грн. |
| JANTX1N5553US |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JANTX1N5553US |
|
Виробник: Semtech Corporation
Description: DIODE GEN PURP 800V 5A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 92pF @ 5V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF
Packaging: Bulk
Description: DIODE GEN PURP 800V 5A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 92pF @ 5V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N5553US |
|
Виробник: Microchip / Microsemi
Rectifiers Rectifier
Rectifiers Rectifier
товару немає в наявності
В кошику
од. на суму грн.