Технічний опис JANTX1N5619US/TR Microchip Technology
Description: DIODE STANDARD 600V 1A D5A, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250 ns, Technology: Standard, Capacitance @ Vr, F: 25pF @ 12V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: D-5A, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A, Current - Reverse Leakage @ Vr: 500 nA @ 600 V, Qualification: MIL-PRF-19500/429.
Інші пропозиції JANTX1N5619US/TR
Фото | Назва | Виробник | Інформація |
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JANTX1N5619US/TR | Виробник : Microchip Technology |
Description: DIODE STANDARD 600V 1A D5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 600 V Qualification: MIL-PRF-19500/429 |
товару немає в наявності |
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JANTX1N5619US/TR | Виробник : Microchip Technology |
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товару немає в наявності |