Технічний опис JANTX1N5822US/TR Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B SQ-MELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 3A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 125°C, Grade: Military, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A, Current - Reverse Leakage @ Vr: 100 µA @ 40 V, Qualification: MIL-PRF-19500/620.
Інші пропозиції JANTX1N5822US/TR
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JANTX1N5822US/TR | Виробник : Microchip Technology |
 Description: DIODE SCHOTTKY 40V 3A B SQ-MELFPackaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 125°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V Qualification: MIL-PRF-19500/620 |
товару немає в наявності |
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| JANTX1N5822US/TR | Виробник : Microchip / Microsemi |
Schottky Diodes & Rectifiers 40V Small-Signal Schottky SQ THT TR |
товару немає в наявності |