JANTX1N6622US/TR Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 660V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
Description: DIODE GEN PURP 660V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
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Технічний опис JANTX1N6622US/TR Microchip Technology
Description: DIODE GEN PURP 660V 2A D-5A, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 10pF @ 10V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: D-5A, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 660 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A, Current - Reverse Leakage @ Vr: 500 nA @ 660 V.
Інші пропозиції JANTX1N6622US/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
JANTX1N6622US/TR | Виробник : Microchip / Microsemi |
 Rectifiers 660V UFR,FRR SQ SMT TR |
товару немає в наявності |