Технічний опис JANTX2N2222AL Microsemi
Description: TRANS NPN 50V 0.8A TO218, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-218, Grade: Military, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW, Qualification: MIL-PRF-19500/255.
Інші пропозиції JANTX2N2222AL
| Фото | Назва | Виробник | Інформація |
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| JANTX2N2222AL | Виробник : MICROSEMI |
 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR JANTX2N2222кількість в упаковці: 1 шт |
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JANTX2N2222AL | Виробник : Microchip Technology |
Description: TRANS NPN 50V 0.8A TO218 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-218 Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
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JANTX2N2222AL | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT BJTs |
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