Технічний опис JANTX2N2432A MOTOROLA
Description: TRANS NPN 45V 0.1A TO18, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: TO-18 (TO-206AA), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V, Current - Collector Cutoff (Max): 10nA, Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V, Operating Temperature: -65°C ~ 175°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-206AA, TO-18-3 Metal Can, Packaging: Bulk, Qualification: MIL-PRF-19500/313, Grade: Military.
Інші пропозиції JANTX2N2432A
| Фото | Назва | Виробник | Інформація |
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JANTX2N2432A | Виробник : Microchip Technology |
 Description: TRANS NPN 45V 0.1A TO18Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: TO-18 (TO-206AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Current - Collector Cutoff (Max): 10nA Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V Operating Temperature: -65°C ~ 175°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk Qualification: MIL-PRF-19500/313 Grade: Military |
товару немає в наявності |
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| JANTX2N2432A | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT Small-Signal BJT |
товару немає в наявності |