JANTX2N3019/TR Microsemi Corporation
Виробник: Microsemi CorporationDescription: TRANS NPN 80V 1A TO-5
Packaging: Tape & Reel (TR)
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/391
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Технічний опис JANTX2N3019/TR Microsemi Corporation
Description: TRANS NPN 80V 1A TO-5, Packaging: Tape & Reel (TR), Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V, Supplier Device Package: TO-5, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 800 mW, Qualification: MIL-PRF-19500/391.
Інші пропозиції JANTX2N3019/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JANTX2N3019/TR | Виробник : Microchip Technology |
Bipolar Transistors - BJT |
товару немає в наявності |