Технічний опис JANTX2N3440L
Description: TRANS NPN 250V 1A TO-5, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 250 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: TO-5, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Current - Collector Cutoff (Max): 2µA, Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AA, TO-5-3 Metal Can, Packaging: Bulk, Qualification: MIL-PRF-19500/368, Grade: Military.
Інші пропозиції JANTX2N3440L
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
|
JANTX2N3440L | Microchip Technology |
Description: TRANS NPN 250V 1A TO-5Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 250 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: TO-5 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector Cutoff (Max): 2µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk Qualification: MIL-PRF-19500/368 Grade: Military |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| JANTX2N3440L | Microchip / Microsemi |
Bipolar Transistors - BJT 250V 1A 800mW Long-Lead Power BJT THT |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| JANTX2N3440L |
![]() |
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO-5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/368
Grade: Military
Description: TRANS NPN 250V 1A TO-5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/368
Grade: Military
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JANTX2N3440L |
![]() |
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT 250V 1A 800mW Long-Lead Power BJT THT
Bipolar Transistors - BJT 250V 1A 800mW Long-Lead Power BJT THT
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.


