Технічний опис JANTX2N5665 MOT
Description: TRANS NPN 300V 5A TO66, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A, Current - Collector Cutoff (Max): 200nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V, Supplier Device Package: TO-66 (TO-213AA), Grade: Military, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 2.5 W, Qualification: MIL-PRF-19500/455.
Інші пропозиції JANTX2N5665
| Фото | Назва | Виробник | Інформація |
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JANTX2N5665 | Виробник : Microchip Technology |
 Description: TRANS NPN 300V 5A TO66Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 2.5 W Qualification: MIL-PRF-19500/455 |
товару немає в наявності |
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| JANTX2N5665 | Виробник : Microchip Technology |
Bipolar Transistors - BJT Power BJT |
товару немає в наявності |