Технічний опис JANTX2N6351 NES/MSC
Description: TRANS NPN DARL 150V 5A TO-33, Packaging: Bulk, Package / Case: TO-205AC, TO-33-4 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V, Supplier Device Package: TO-33, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 1 W, Qualification: MIL-PRF-19500/472.
Інші пропозиції JANTX2N6351
| Фото | Назва | Виробник | Інформація |
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JANTX2N6351 | Виробник : Microchip Technology |
 Description: TRANS NPN DARL 150V 5A TO-33Packaging: Bulk Package / Case: TO-205AC, TO-33-4 Metal Can Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V Supplier Device Package: TO-33 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 1 W Qualification: MIL-PRF-19500/472 |
товару немає в наявності |
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| JANTX2N6351 | Виробник : Microchip Technology |
Darlington Transistors Power BJT |
товару немає в наявності |