JANTXV1N3070UR-1 Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 175V 100MA DO7
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 µs
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: DO-7
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
Qualification: MIL-PRF-19500/169
Description: DIODE GEN PURP 175V 100MA DO7
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 µs
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: DO-7
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
Qualification: MIL-PRF-19500/169
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Технічний опис JANTXV1N3070UR-1 Microchip Technology
Description: DIODE GEN PURP 175V 100MA DO7, Packaging: Bulk, Package / Case: DO-204AA, DO-7, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 50 µs, Technology: Standard, Current - Average Rectified (Io): 100mA, Supplier Device Package: DO-7, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 175 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Current - Reverse Leakage @ Vr: 100 nA @ 175 V, Qualification: MIL-PRF-19500/169.
Інші пропозиції JANTXV1N3070UR-1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JANTXV1N3070UR-1 | Виробник : Microchip Technology |
 Diodes - General Purpose, Power, Switching Switching Diode |
товару немає в наявності |