JANTXV1N3595US/TR Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 4A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Grade: Military
Qualification: MIL-PRF-19500/241
Description: DIODE GEN PURP 125V 4A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Grade: Military
Qualification: MIL-PRF-19500/241
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Технічний опис JANTXV1N3595US/TR Microchip Technology
Description: DIODE GEN PURP 125V 4A B SQ-MELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Current - Average Rectified (Io): 4A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 125 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA, Grade: Military, Qualification: MIL-PRF-19500/241.
Інші пропозиції JANTXV1N3595US/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
JANTXV1N3595US/TR | Виробник : Microchip / Microsemi |
 Rectifiers 125V 4A Signal or Computer Diode SQ SMT TR |
товару немає в наявності |