JANTXV1N4246/TR Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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Технічний опис JANTXV1N4246/TR Microchip Technology
Description: DIODE GEN PURP 400V 1A, Packaging: Tape & Reel (TR), Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 5 µs, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Current - Reverse Leakage @ Vr: 1 µA @ 400 V.
Інші пропозиції JANTXV1N4246/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
JANTXV1N4246/TR | Виробник : Microchip / Microsemi |
 Rectifiers Rectifier |
товару немає в наявності |