Технічний опис JANTXV1N4942 Microchip / Microsemi
Description: DIODE GEN PURP 200V 1A AXIAL, Qualification: MIL-PRF-19500/359, Current - Reverse Leakage @ Vr: 1 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Grade: Military, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: A, Axial, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 45pF @ 12V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 150 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: A, Axial, Packaging: Bulk.
Інші пропозиції JANTXV1N4942
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JANTXV1N4942 | Виробник : Semtech |
 MIL 1A FAST RECTIFIER POWER DISCR 1N4942кількість в упаковці: 1 шт |
товару немає в наявності |
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JANTXV1N4942 | Виробник : Microchip Technology |
Description: DIODE GEN PURP 200V 1A AXIAL Qualification: MIL-PRF-19500/359 Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Military Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: A, Axial Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 45pF @ 12V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: A, Axial Packaging: Bulk |
товару немає в наявності |