Технічний опис JANTXV1N5551US Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B, Packaging: Bulk, Package / Case: SQ-MELF, E, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: D-5B, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 400 V, Grade: Military, Qualification: MIL-PRF-19500/420.
Інші пропозиції JANTXV1N5551US
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JANTXV1N5551US | Виробник : Microchip Technology |
 Description: DIODE GEN PURP 400V 3A D-5BPackaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Grade: Military Qualification: MIL-PRF-19500/420 |
товару немає в наявності |
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JANTXV1N5551US | Виробник : Microchip / Microsemi |
Rectifiers 440V 3A Std Rectifier SQ SMT |
товару немає в наявності |