Технічний опис JANTXV1N5552/TR Microchip Technology
Description: DIODE GEN PURP 600V 5A, Packaging: Tape & Reel (TR), Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 5A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Qualification: MIL-PRF-19500/420.
Інші пропозиції JANTXV1N5552/TR
| Фото | Назва | Виробник | Інформація |
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JANTXV1N5552 T/R | Виробник : Microchip Technology |
 Rectifier Diode Switching 600V 5A 2000ns 2-Pin Case E T/R |
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JANTXV1N5552/TR | Виробник : Microchip Technology |
Description: DIODE GEN PURP 600V 5A Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Qualification: MIL-PRF-19500/420 |
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JANTXV1N5552/TR | Виробник : Microchip / Microsemi |
Rectifiers 600 V Std Rectifier |
товар відсутній |